features ? high voltage operation (vds=28v) gaas fet ? high gain: 15.5db(typ.) at pout=44.8dbm(avg.) ? broad frequency range : 2110 to 2170mhz ? high reliability description the FLL21E135IX is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this device is target for high voltage, low current operation in digitally modul ated base station amplifiers. this product is ideally suited for w-cdma and multi-carrier pcs base station amplifiers while offering high gain, long term reliability and ease of use. edition 1.1 june 2004 1 FLL21E135IX l,s-band high power gaas fet absolute maximum rating item symbol condition unit drain-source voltage v ds v gate-source voltage v gs v total power dissipation p t w storage temperature t stg - o c channel temperature t ch - o c recommended operating condition (case temperature tc=25 o c) item symbol condition unit dc input voltage v ds v forward gate current i gf r g =2 ? ma reverse gate current i gr r g =2 ? ma channel temperature t ch o c electrical characteristics (case temperature tc=25 o c) min. typ. max. pinch-off voltage v p v ds =5v, i ds =226ma -0.1 -0.2 -0.5 v gate-source breakdown boltage v gso i gs =-2.26ma -5 - - v 3rd order intermodulation distortion im 3 --33-30 dbc power gain g p 14.5 15.5 - db drain efficiency d -26- % adjacent channel leakage power ratio aclr - -35 - dbc themal resistance r th channel to case - 0.8 1.0 o c/w note 1 : im 3 , aclr and gain test conditions as follows im 3 & gain : f 0 =2.1325ghz, f 1 =2.1475ghz w-cdma(3gpp3.4 12-0) bs-1 64ch non clipping modulation measured over 3.84mhz at f 0 -15mhz and f 1 +15mhz. aclr : f 0 =2.1325ghz w-cdma (3gpp3.4 12-00) bs-1 64ch non clipping modulation, measured over 3.84mhz at f 0 +/-5mhz esd note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) case style : ix class iii 2000v ~ t c =25 o c (case temperature) rating 32 -3 175 limit 155 65 to +175 200 <28 <529 >-48 v ds =28v i ds (dc)=1000ma p out =44.8dbm(avg.) no t e 1 unit item symbol condition limit
2 output power & drain efficiency vs. input power v ds =28v, i ds =1000ma, f=2.14ghz FLL21E135IX output power vs. frequency v ds =28v, i ds =1000ma l,s-band high power gaas fet two-carrier imd(aclr) vs. output power v ds =28v, i ds =1000ma, fo=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v, i ds =1000ma, fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation -60 -55 -50 -45 -40 -35 -30 -25 26 28 30 32 34 36 38 40 42 44 46 48 output power[dbm] aclr[dbc] 0 5 10 15 20 25 30 35 drain efficiency[%] +/-5mhz +/-10mhz drain efficiency 32 34 36 38 40 42 44 46 48 50 52 54 2.08 2.1 2.12 2.14 2.16 2.18 2.2 frequency [ghz] output power[dbm] pin=24dbm pin=28dbm pin=32dbm pin=36dbm pin=40dbm 34 36 38 40 42 44 46 48 50 52 54 24 26 28 30 32 34 36 38 40 42 input pow er [dbm] output power[dbm] 0 10 20 30 40 50 60 70 80 90 100 drain efficiency [%] d pout -60 -55 -50 -45 -40 -35 -30 -25 24 26 28 30 32 34 36 38 40 42 44 46 48 output power(dbm) imd(dbc) 0 5 10 15 20 25 30 35 drain efficiency(%) im3 im5 drain efficiency
3 FLL21E135IX l,s-band high power gaas fet cw imd vs. tone spacing @v ds =28v, i ds =1000ma, fc=2.14ghz pout=44.8dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 0.1 1 10 100 tw o-tone spacing [mhz] imd[dbc] im3 im5
FLL21E135IX l,s-band high power gaas fet 4 board layout circuit diagram of the board r=3.5 t=0.8mm v gs v ds c1 c2 c3 c4 c7 c8 c9 c10 c11x5 c13 c12 c14 c15 c16 r2 c17 c18 c19 c20 c5 c6 l1 r1 z1 z2 z3 z4 c1 c3 c4 c5 c6 z5 z6 z7 z8 z9 z10 z11 z12 z13 c10 c11x5 c7 c8 c9 l1 c2 c12 c13 c14 c15 c16 c17c18 c19 r2 r1 c20 z1, z13 9.00mm x 1.78mm transmission line z2 15.3mm x 1.78mm transmission line z3 14.5mm x 1.78mm transmission line z4 4.00mm x 6.00mm transmission line z5 2.00mm x 19.0mm transmission line z6 4.00mm x 25.0mm transmission line z7 23.0mm x 0.5mm transmission line z8 6.00mm x 13.0mm transmission line z9 23.0mm x 1.5mm transmission line z10,z11 3.00mm x 1.78mm transmission line z12 26.8mm x 1.78mm transmission line c1,c2 10pf c3,c5,c6,c9 1.0pf c4,c7 2.0pf c8 0.5pf c10 1.5pf c11 0.1uf c12,c17 20pf c13,c18 100nf c14,c19 1000pf c15,c16 10uf c20 22uf l1 3.3nf r1 2.0ohm r2 51ohm board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm
5 FLL21E135IX l,s-band high power gaas fet s-parameters @v ds =28v, i ds =1000ma, f=1.0 to 3.0 ghz freq. s11 s21 s12 s22 [ghz] mag ang mag ang mag ang mag ang 1.00 0.9744 - 172.9 0.1231 19.18 0.0009 118.28 0.9739 - 173.7 1.10 0.9752 - 172.1 0.1202 19.694 0.0009 106.99 0.9682 - 173.7 1.20 0.9708 - 171.1 0.1285 21.086 0.0011 111.32 0.9685 - 173.3 1.30 0.972 - 170.6 0.1399 19.632 0.0007 110.55 0.964 - 173.3 1.40 0.971 - 169.9 0.1663 20.479 0.0014 112.61 0.9622 - 173 1.50 0.9704 - 169.3 0.2107 17.23 0.0012 120.57 0.9597 - 173.1 1.60 0.9645 - 169 0.2931 15.203 0.0014 132.46 0.9495 - 173.9 1.70 0.9551 - 168.3 0.4614 2.7031 0.002 130.35 0.9362 - 175.2 1.80 0.9453 - 168.4 0.7228 - 11.03 0.0019 129.76 0.9077 - 178 1.90 0.9072 - 168.8 1.5261 - 33.93 0.0023 90.866 0.8355 176.25 2.00 0.768 - 168.1 4.1355 - 98.92 0.0044 - 121.8 0.4363 164.03 2.10 0.8443 - 154.3 2.5913 154.54 0.0079 124.86 0.6937 - 141.3 2.11 0.8433 - 154.4 2.3576 148.65 0.0072 120.82 0.717 - 142.2 2.12 0.8573 - 154.4 2.1471 143.12 0.0069 110.87 0.7382 - 143.1 2.13 0.8653 - 153.9 1.9666 137.99 0.0068 107.11 0.7538 - 143.9 2.14 0.8734 - 154.2 1.8015 133.25 0.0062 103.85 0.7726 - 144.6 2.15 0.8798 - 154 1.6495 128.59 0.006 100.67 0.7845 - 145.3 2.16 0.8892 - 154.3 1.5161 124.1 0.0061 97.466 0.7953 - 145.9 2.17 0.889 - 154.4 1.3868 120.14 0.0057 93.934 0.8075 - 146.3 2.18 0.8948 - 154.1 1.2676 116.57 0.0055 85.692 0.8167 - 146.9 2.19 0.9036 - 154.4 1.1656 113.03 0.0049 85.248 0.8283 - 147.1 2.20 0.9047 - 153.9 1.0698 109.89 0.0046 86.496 0.8358 - 147.6 2.30 0.9392 - 154.1 0.519 93.307 0.0026 64.547 0.8916 - 150.6 2.40 0.9523 - 153.7 0.3389 81.392 0.0016 60.732 0.9169 - 152.6 2.50 0.9558 - 153.3 0.2188 73.554 0.0003 99.556 0.9269 - 154 2.60 0.9623 - 152.9 0.1707 67.904 0.0007 - 174.6 0.9309 - 155 2.70 0.9609 - 152.3 0.1227 60.783 0.002 - 170.4 0.936 - 156.3 2.80 0.9642 - 151 0.1082 63.903 0.0026 - 168.3 0.9324 - 157.5 2.90 0.9716 - 150.9 0.0977 50.797 0.0032 - 179.6 0.9288 - 158.7 3.00 0.9716 - 150 0.0769 51.905 0.0044 - 177 0.9252 - 160.3 s11 s22 +10 j +25 j +50 j +100 j +250 j -250 j -100 j -50 j -25 j -10 j 2.0gh z 2.1 2.2 2.0gh z 2.1 2.2 50 0 s21 s12 5.0 4.0 sc ale f or s21 0.1 0.08 sc ale f or s12 2.0 ghz 2.1 2.2 0 +90 180 - 90
6 FLL21E135IX l,s-band high power gaas fet ix package outline unit : mm 13.716 34.036 12.7 5.080 5.080 r0.508 3.302 29.50 1.575 0.152 9.98
7 FLL21E135IX l,s-band high power gaas fet for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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